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- W3113339345 abstract "To improve the thermal stability of multilayered solar selective absorber, an atomic-layer-deposited (ALD) Al2O3 layer was adopted to suppress the diffusion of metal atoms from the bottom reflection layer. The designed film structure was as that: Cu (>100.0 nm)/Al2O3 (59.8 nm)/Cr (17.8 nm)/SiO2 (66.3 nm)/Cr (4.4 nm)/SiO2 (83.0 nm). Multi-target magnetron sputtering method was employed to fabricate Cu, SiO2, and Cr layers, while for the Al2O3 layer, it was prepared by ALD. The sample has a solar absorptance of about 95.4% and a thermal emittance of 0.196 at the temperature of 773 K. The sample with the Al2O3 barrier layer work stably at 500 °C for 72 h, demonstrating that the proposed multilayer solar selective absorber is suitable for applications at middle-temperature solar thermal conversion systems." @default.
- W3113339345 created "2020-12-21" @default.
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- W3113339345 date "2021-03-01" @default.
- W3113339345 modified "2023-10-18" @default.
- W3113339345 title "Enhanced thermal stability of the metal/dielectric multilayer solar selective absorber by an atomic-layer-deposited Al2O3 barrier layer" @default.
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- W3113339345 doi "https://doi.org/10.1016/j.apsusc.2020.148678" @default.
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