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- W3113463670 abstract "Abstract This paper presents an effective device-level failure analysis (FA) method which uses a high-resolution low-kV Scanning Electron Microscope (SEM) in combination with an integrated state-of-the-art nanomanipulator to locate and characterize single defects in failing CMOS devices. The presented case studies utilize several FA-techniques in combination with SEM-based nanoprobing for nanometer node technologies and demonstrate how these methods are used to investigate the root cause of IC device failures. The methodology represents a highly-efficient physical failure analysis flow for 28nm and larger technology nodes." @default.
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- W3113463670 date "2013-11-01" @default.
- W3113463670 modified "2023-09-26" @default.
- W3113463670 title "SEM-Based Nanoprobing on 40, 32 and 28 nm CMOS Devices Challenges for Semiconductor Failure Analysis" @default.
- W3113463670 doi "https://doi.org/10.31399/asm.cp.istfa2013p0217" @default.
- W3113463670 hasPublicationYear "2013" @default.
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