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- W3114341607 abstract "Abstract With the shrinkage of the IC device dimensions, Cu and ultra-low-k dielectric were introduced into IC devices to reduce RC delay. Ultra-low-k dielectrics generally suffer more damage than silicon oxide dielectric during process integration and subsequently cause reliability degradation. Therefore, ultra-low-k damage characterization on Cu damascene structures is of great importance to understand the damage mechanisms. This paper describes the application of UV-Raman microscopy with enhanced spatial resolution and signal sensitivity for characterizing ultra-low-k dielectric in the three-dimension structure of Cu metallization with nanometer feature size. It shows UV-Raman technique has an advantage in analyzing ultra-low-k layer on patterned wafer and extracting ultra-low-k signals from Cu/ultra-low-k mixed structure. UV-Raman is also effective to characterize the ultra-low-k degradation for ultra-low-k related reliability analysis by time dependent dielectric breakdown (TDDB) test." @default.
- W3114341607 created "2021-01-05" @default.
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- W3114341607 date "2013-11-01" @default.
- W3114341607 modified "2023-09-27" @default.
- W3114341607 title "UV-Raman Microscopy on the Analysis of Ultra-Low-k Dielectric Materials on Patterned Wafers" @default.
- W3114341607 doi "https://doi.org/10.31399/asm.cp.istfa2013p0517" @default.
- W3114341607 hasPublicationYear "2013" @default.
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