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• W3115408857 abstract "Abstract The synthesis, microstructure, and properties of high purity dense bulk Mo 2 TiAlC 2 ceramics were studied. High purity Mo 2 TiAlC 2 powder was synthesized at 1873 K starting from Mo, Ti, Al, and graphite powders with a molar ratio of 2:1:1.25:2. The synthesis mechanism of Mo 2 TiAlC 2 was explored by analyzing the compositions of samples sintered at different temperatures. It was found that the Mo 2 TiAlC 2 phase was formed from the reaction among Mo 3 Al 2 C, Mo 2 C, TiC, and C. Dense Mo 2 TiAlC 2 bulk sample was prepared by spark plasma sintering (SPS) at 1673 K under a pressure of 40 MPa. The relative density of the dense sample was 98.3%. The mean grain size was 3.5 μm in length and 1.5 μm in width. The typical layered structure could be clearly observed. The electrical conductivity of Mo 2 TiAlC 2 ceramic measured at the temperature range of 2–300 K decreased from 0.95 × 10 6 to 0.77 × 10 6 Ω–1·m–1. Thermal conductivity measured at the temperature range of 300–1273 K decreased from 8.0 to 6.4 W·(m·K) –1 . The thermal expansion coefficient (TEC) of Mo 2 TiAlC 2 measured at the temperature of 350–1100 K was calculated as 9.0 × 10 –6 K –1 . Additionally, the layered structure and fine grain size benefited for excellent mechanical properties of low intrinsic Vickers hardness of 5.2 GPa, high flexural strength of 407.9 MPa, high fracture toughness of 6.5 MPa·m 1/2 , and high compressive strength of 1079 MPa. Even at the indentation load of 300 N, the residual flexural strength could hold 84% of the value of undamaged one, indicating remarkable damage tolerance. Furthermore, it was confirmed that Mo 2 TiAlC 2 ceramic had a good oxidation resistance below 1200 K in the air." @default.
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• W3115408857 date "2020-12-01" @default.
• W3115408857 modified "2023-10-16" @default.
• W3115408857 title "Synthesis, microstructure, and properties of high purity Mo2TiAlC2 ceramics fabricated by spark plasma sintering" @default.
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• W3115408857 doi "https://doi.org/10.1007/s40145-020-0412-7" @default.
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