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• W3115757760 startingPage "SBBH03" @default.
• W3115757760 abstract "Abstract To enhance the feasibility of 2-dimensional transition metal dichalcogenides (TMDCs) channels in future nano-electronic and optoelectronic devices, a top gate device structure fabricated with very-large-scale-integration compatible process is mandatory. High- κ dielectric ZrO 2 has been directly deposited on MoS 2 through low-temperature atomic layer deposition (ALD) without any surface protection layers. The uniform growth of ZrO 2 on MoS 2 was confirmed to be caused by the physical adsorption, resulting in the suppressed interfacial oxidation and the reduced damage of monolayer (1L) MoS 2 channel. Low thermal budget post-deposition annealing was found to be effective for reducing interfacial traps between ZrO 2 and MoS 2 interface, thus enhancing the device performances of 1L MoS 2 nMOSFETs. Low capacitance equivalent thickness (CET) of ZrO 2 of 2.3 nm has been achieved while maintaining decent device performance, indicating low-temperature ALD is promising for future TMDC top gate devices with a high-quality interface and thin CET." @default.
• W3115757760 created "2021-01-05" @default.
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• W3115757760 date "2021-01-11" @default.
• W3115757760 modified "2023-10-18" @default.
• W3115757760 title "ALD-ZrO₂ gate dielectric with suppressed interfacial oxidation for high performance MoS₂ top gate MOSFETs" @default.
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• W3115757760 doi "https://doi.org/10.35848/1347-4065/abd6d9" @default.
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