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• W3115976165 abstract "The most attractive application of graphene in the RF area is low-noise amplifier (LNA) due to its amazing properties. But, design and fabrication of graphene LNA Monolithic Microwave Integrated Circuits (MMICs) are still blank. In this work, 200 nm gate-length chemical vapor deposition (CVD) monolayer graphene transistors were fabricated on a sapphire substrate. The graphene transistor shows an intrinsic gain of g <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>m</sub> /g <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ds</sub> = 1.1, and high extrinsic maximum oscillation frequency with f <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>max</sub> (48 GHz) > cutoff frequency f <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>T</sub> (43 GHz). The graphene transistors show low extrinsic minimum noise figure of 2-7 dB in the measured frequency range of 6-50 GHz. AC-band graphene LNA MMIC was designed and fabricated and shows a maximum gain of 8.34 dB at 5.5 GHz, and minimum noise figure of 4.96 dB at 5.8 GHz. This work demonstrates the application potential of graphene for future RF high-speed electronics." @default.
• W3115976165 created "2021-01-05" @default.
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• W3115976165 date "2021-02-01" @default.
• W3115976165 modified "2023-10-16" @default.
• W3115976165 title "Field Effect Transistors and Low Noise Amplifier MMICs of Monolayer Graphene" @default.
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• W3115976165 doi "https://doi.org/10.1109/led.2020.3045710" @default.
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