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- W3117543323 abstract "In the last decades, low-dimensional III-V nanostructures, such as nanowires and nanosheets, have drawn tremendous research interests, due to their superior electronic and optoelectronic properties, which have a lot of potential applications in nanoelectronics and optoelectronics. As an important category among III-V materials, InAs, having properties such as narrow band gap and high electron mobility, is one of the building blocks for future nanodevices. Generally speaking, most nanostructures catalyzed by metallic catalysts were found to be one-dimensional nanowires along the [-1-1-1]/[000-1] growth directions grown via the vapor-liquid-solid mechanism. While InAs nanostructure growth along non-[-1-1-1]/[000-1] direction or via vapor-solid-solid mechanism has not been fully understood. For InAs nanostructures for a wider range of device applications, it is critical to explore the growth of novel InAs nanostructures and investigate their growth mechanism, which can open up the fabrication of new nanodevices based on these InAs nanostructures.In this thesis, I have explored the growth of various InAs nanostructures catalyzed by Au nanoparticles on GaAs {-1-1-1} substrate in MBE. By carefully controlling the growth parameters and catalysts in the MBE growth, I have successfully realized the growth of free-standing InAs nanosheets growing from wurtzite structured nanowires, epitaxial InAs nanosheets grown on GaAs {-1-1-1} substrate and free-standing zinc-blende structured InAs nanobelts grown on GaAs {-1-1-1} substrate. Through the advanced electron microscopy characterization, their structural, chemical and morphological characteristics were investigated, and based on these experimental results, their growth mechanisms were revealed. Furthermore, III-V nanostructure growth via vapor-solid-solid (VSS) growth has not been fully investigated, in which particles in solid phase can act as catalysts to induce nanostructure growth. In this regard, I employed in situ TEM technique to investigate the growth of InAs nanowires and witness their interface evolution at an atomic level. By precisely controlling the heating temperature, the detailed in situ TEM experiments have clarified the VSS growth mechanism of InAs nanowires." @default.
- W3117543323 created "2021-01-05" @default.
- W3117543323 creator A5030389222 @default.
- W3117543323 date "2020-11-20" @default.
- W3117543323 modified "2023-09-25" @default.
- W3117543323 title "Understanding of InAs nanostructure growth by molecular beam epitaxy" @default.
- W3117543323 doi "https://doi.org/10.14264/8692317" @default.
- W3117543323 hasPublicationYear "2020" @default.
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