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- W3117657173 abstract "Abstract Atomic Force Probe (AFP) techniques are well suited for the electrical characterization of sub-65nm node SOI devices with multiple metal interconnect levels and low-k interlevel dielectric films. This paper discusses the use of these techniques on sub-30nm gatelength SOI MOSFETs." @default.
- W3117657173 created "2021-01-05" @default.
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- W3117657173 date "2004-10-01" @default.
- W3117657173 modified "2023-09-23" @default.
- W3117657173 title "Electrical Characterization of Sub-30nm Gatelength SOI MOSFETs" @default.
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- W3117657173 doi "https://doi.org/10.31399/asm.cp.istfa2004p0033" @default.
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