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- W3118161854 abstract "This work investigates the mechanism of threshold voltage V th shift of D-Mode GaN-on-Si high electron mobility transistors (HEMTs) based on double pulse I DS -V GS measurements. The influence of applied drain voltage V DS on shift of V th is also studied. The V th shift is attributed to the traps located at the dielectric and dielectric/III-nitride interface. More specifically, (1) the presence of relatively fast traps located in the SiN x capture electrons tunneling from the gate metal in the quiescent gate pulse points, which cannot be released during the measurement, inducing the positive shift of V th ; (2) the higher V DS with higher electric field promote the release of electrons from the interface states to the channel, which is more obvious on the on-state gate pulse, leading to a smaller positive shift of V th when comparing to off-state." @default.
- W3118161854 created "2021-01-05" @default.
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- W3118161854 date "2020-11-03" @default.
- W3118161854 modified "2023-09-27" @default.
- W3118161854 title "A Study on the Threshold Voltage Shift under Gate-pulse Stress in D-mode GaN MIS-HEMTs" @default.
- W3118161854 doi "https://doi.org/10.1109/icsict49897.2020.9278171" @default.
- W3118161854 hasPublicationYear "2020" @default.
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