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- W3118444790 abstract "We investigate the structural, morphological and optoelectronic properties of Cu(In,Ga)S <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> thin films synthesized following the 3-stage process. The optoelectronic characteristics of the layers are observed drastically improved when the highest processing temperature is increased up to 600°C. Surprisingly, these latter films are not those yielding the highest cells efficiency, probably because of non-optimized buffer/absorber interface. The best performance we have achieved within the frame of this study is 14.2% for a bandgap of 1.65 eV, which is among the best results ever reached with these polycrystalline structures." @default.
- W3118444790 created "2021-01-18" @default.
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- W3118444790 date "2020-06-14" @default.
- W3118444790 modified "2023-10-18" @default.
- W3118444790 title "High efficiency solar cell based on Cu(In,Ga)S<sub>2</sub> thin film grown by 3-stage process" @default.
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- W3118444790 doi "https://doi.org/10.1109/pvsc45281.2020.9300598" @default.
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