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- W3118470652 abstract "A novel firing stable $n^{+}/p^{+}$ poly-Si tunnel junction (TJ) was realized for the first time using industrial tools on 6-inch Czochralski (Cz) silicon substrates. After being subjected to a fast firing furnace anneal, the TJ showed minimal degradation from its peak iV OC of 700mV and the contact resistance, $rho_{mathrm{c}}$ decreased from 0.9 to 0.5 Ohmcm2. To further test the viability of the TJ, it was integrated onto a bi-polysilicon double-side passivated-contact solar cell, achieving a fill factor (FF) of approximately 80% and an absolute infrared efficiency of up to 26.7% (1 cm2). The successful proof-of-concept demonstration creates an opportunity for an entirely new type of TJ to be seamlessly deployed on top of a silicon cell for 2-terminal thin-film on silicon tandems." @default.
- W3118470652 created "2021-01-18" @default.
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- W3118470652 date "2020-06-14" @default.
- W3118470652 modified "2023-10-16" @default.
- W3118470652 title "Novel Firing Stable $n^{+}/p^{+}$ Polysilicon Tunnel Junction and its Successful Device Integration" @default.
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- W3118470652 doi "https://doi.org/10.1109/pvsc45281.2020.9300628" @default.
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