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- W3118526732 abstract "In order to advance the thin film silicon solar cell technology, it is desirable to replace the layers of doped thin film silicon or its alloys with alternative materials that can be deposited by simple physical vapor deposition (PVD) methods. Here, a dopant free a-Si:H solar cell design of Asahi U substrate| MoOx | a-Si:H | LiF | Al is investigated. All the layers, except the intrinsic a-Si:H absorber layer, are deposited by PVD methods. This cell has a power conversion efficiency of 8.02% under the standard test conditions." @default.
- W3118526732 created "2021-01-18" @default.
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- W3118526732 date "2020-06-14" @default.
- W3118526732 modified "2023-09-24" @default.
- W3118526732 title "High Efficiency Dopant Free a-Si:H Solar Cell" @default.
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- W3118526732 doi "https://doi.org/10.1109/pvsc45281.2020.9300666" @default.
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