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• W3118686854 startingPage "106788" @default.
• W3118686854 abstract "This paper presents analytical modeling of linearity and intermodulation distortion of a rectangular GAA JL FET using 3D surface potential and drain current. The surface potential (ψ(x,y,z)) of the GAA JL FET is derived based on the ψ(x,y,z) dimension based approximation approach (i.e., weighted sum of ψ(x,y) and ψ(x,z)). The proposed method provides an alternate solution that yields good accuracy, avoiding the critical mathematical computations of conventional 3D analysis. The depletion length and the drain current are also determined analytically. Moreover, with this current expression, the device's linearity performance has been examined based on PIP3, VIP2, VIP3, and IMD3. Therefore, the analysis optimizes the device's bias point for RFICs with an analytical model for better linearity performance." @default.
• W3118686854 created "2021-01-18" @default.
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• W3118686854 date "2021-02-01" @default.
• W3118686854 modified "2023-10-15" @default.
• W3118686854 title "Analytical modeling of linearity and intermodulation distortion of 3D gate all around junctionless (GAA - JL) FET" @default.
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• W3118686854 doi "https://doi.org/10.1016/j.spmi.2020.106788" @default.
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