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- W3119467585 abstract "Transparent conducting oxides (TCO), indium-gallium-tin-oxides (IGTO), were deposited on Polyethylene terephthalate (PET) and glass substrate separately while using DC co-sputtering with SnO2 and In2O3 (with Ga2O3 pellet) target combinations. As different preparing conduction, amorphous indium-gallium-tin-oxide (α-IGTO) films achieves with Hall mobility of 27.38 cm2/V s, carrier concentration of 15.45×1020 cm-3 and resistivity of 3.82×10-4 Ω.cm. The resistivity of the prepared films is ten times lower than that of f Indium tin oxide (ITO) (<; 2.6 ×10-3 Ω.cm), and Hall mobility makes it better than the commercialized InGaZnO thin films (8.06 cm2/Vs). The transmittance of thin film (including substrate) can reach up to 90.26% at 550nm wavelength and the range of band gaps (Eg) for thin film between 3.58 and 3.93 eV." @default.
- W3119467585 created "2021-01-18" @default.
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- W3119467585 date "2020-11-23" @default.
- W3119467585 modified "2023-10-14" @default.
- W3119467585 title "The effect of Ga-content and target current on transparent conducting InGaSnO thin film by the DC sputtering on different substrates" @default.
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- W3119467585 doi "https://doi.org/10.1109/sslchinaifws51786.2020.9308705" @default.
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