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• W3119492703 abstract "We demonstrate herein the fabrication and operation of p-type GaN Schottky barrier diodes (SBDs) with nearly ideal rectifying characteristics using vertical bottom tunneling junction contacts. The interface between Ni and p-type GaN provides a large Schottky barrier height of 2.29 eV, which is promising for high-temperature operations. The vertical p-type GaN SBDs show nearly ideal rectifying characteristics with an ideality factor close to unity and a rectifying ratio as high as 106, even at 600 K. This distinguished performance indicates the superiority of p-type GaN SBDs for electron devices operated under high-temperature environments." @default.
• W3119492703 created "2021-01-18" @default.
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• W3119492703 date "2021-01-11" @default.
• W3119492703 modified "2023-10-14" @default.
• W3119492703 title "Vertical p-type GaN Schottky barrier diodes with nearly ideal thermionic emission characteristics" @default.
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• W3119492703 doi "https://doi.org/10.1063/5.0036093" @default.
• W3119492703 hasPublicationYear "2021" @default.
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