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- W3119881805 abstract "Abstract A great understanding of the manipulation of film thickness has led to a number of advances in controlling film-based device properties. Here, the resistance random access memory (RRAM) device of Au/magnesium-doped zinc oxide (MZO)/indium tin oxide (ITO) configuration was fabricated with the asymmetric electrode. The variation of MZO film thickness was designed to tailor the RRAM performance. It can be concluded that, the RRAM device with too thin MZO film is extremely vulnerable to be broken down. While the film is too thick, it is difficult to form conductive filaments, which results in poor resistance-switching characteristics. The good state retention time and fatigue resistance characteristics of the RRAM device can be achieved with 160 nm-thick MZO film. Based on the influence of MZO film thickness on the RRAM performance, a resistance switching mechanism of MZO-RRAM device is proposed with the asymmetric electrode." @default.
- W3119881805 created "2021-01-18" @default.
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- W3119881805 date "2021-03-01" @default.
- W3119881805 modified "2023-10-17" @default.
- W3119881805 title "Resistance random access memory performance of MgZnO-based device with varying film thickness by an asymmetric electrode of Au/ITO" @default.
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- W3119881805 doi "https://doi.org/10.1016/j.mtla.2021.101001" @default.
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