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• W3119930151 abstract "Abstract In this paper we present investigation of hole transport properties in sandwich and OFET structures with single active layer of PBDTTPD (Poly[(5,6-dihydro-5-octyl-4,6-dioxo-4H-thieno[3,4-c]pyrrole-1,3-diyl)[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b′]dithiophene-2,6-diyl]]). Sandwich structures were investigated by photo-CELIV and TOF techniques, obtained results showed strongly time dependent hole mobility and non-Gaussian DOS tail. Photogenerated charge carrier decay experiment demonstrated that bimolecular recombination coefficient is smaller than calculated Langevin recombination coefficient and this was explained by faster holes escaping recombination area and not participating in Langevin recombination process. Organic field-effect transistor structure was investigated by current transients technique to find hole mobility near the dielectric layer and to study OTS treatment influence on hole transport. The study of hole mobility dependence on temperature was performed in order to evaluate energetic disorder of interface DOS in the channel of OFET structures." @default.
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• W3119930151 date "2021-03-01" @default.
• W3119930151 modified "2023-09-23" @default.
• W3119930151 title "Investigation of charge carrier mobility and recombination in PBDTTPD thin layer structures" @default.
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• W3119930151 doi "https://doi.org/10.1016/j.orgel.2021.106066" @default.
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