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- W3119964401 abstract "This paper reports on the optimization of 1 eV dilute nitride solar cells growth conditions. InGaAsN cells were grown by MBE under different conditions (V/III ratio, substrate temperature, surfactant) and were processed without post-growth annealing. Characterization results suggest that the V/III ratio should be kept above 10 and that using Bi as a surfactant does not improve the cell performances. Our best InGaAsN cells exhibit J <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>sc</sub> and V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>oc</sub> values of 7.9 mA/cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> and 0.375 V respectively, under nm and without ARC." @default.
- W3119964401 created "2021-01-18" @default.
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- W3119964401 date "2020-06-14" @default.
- W3119964401 modified "2023-10-05" @default.
- W3119964401 title "Development of 1 eV InGaAsN PIN subcell for MJSC integration and space application" @default.
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- W3119964401 doi "https://doi.org/10.1109/pvsc45281.2020.9300570" @default.
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