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- W3120493670 abstract "Abstract The temperature effect on the Raman scattering efficiency is investigated in $$varepsilon$$ <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML> <mml:mi>ε</mml:mi> </mml:math> -GaSe and $$gamma$$ <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML> <mml:mi>γ</mml:mi> </mml:math> -InSe crystals. We found that varying the temperature over a broad range from 5 to 350 K permits to achieve both the resonant conditions and the antiresonance behaviour in Raman scattering of the studied materials. The resonant conditions of Raman scattering are observed at about 270 K under the 1.96 eV excitation for GaSe due to the energy proximity of the optical band gap. In the case of InSe, the resonant Raman spectra are apparent at about 50 and 270 K under correspondingly the 2.41 eV and 2.54 eV excitations as a result of the energy proximity of the so-called B transition. Interestingly, the observed resonances for both materials are followed by an antiresonance behaviour noticeable at higher temperatures than the detected resonances. The significant variations of phonon-modes intensities can be explained in terms of electron-phonon coupling and quantum interference of contributions from different points of the Brillouin zone." @default.
- W3120493670 created "2021-01-18" @default.
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- W3120493670 date "2021-01-13" @default.
- W3120493670 modified "2023-10-17" @default.
- W3120493670 title "Resonance and antiresonance in Raman scattering in GaSe and InSe crystals" @default.
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- W3120493670 doi "https://doi.org/10.1038/s41598-020-79411-x" @default.
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