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- W3120656667 abstract "We report on the developments related to the elaboration of 2-terminals CuGaSe2 (CGSe) on crystalline silicon (c-Si) monolithic tandem solar cells. Two different approaches for the interface layers between both cells were investigated. The first one uses thin ITO films as recombination layers. The second is based on a passivating tunnel junction formed by a p-type poly-crystalline Si films deposited on the implanted n+emitter of the silicon subcell, both highly doped layers being separated by an ultra-thin interfacial silicon oxide films. The first functional CuGaSe2/c-Si tandem devices were recently elaborated, with for both approaches, Open Circuit Voltage (Voc) values exceeding 1.1V." @default.
- W3120656667 created "2021-01-18" @default.
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- W3120656667 date "2020-06-14" @default.
- W3120656667 modified "2023-09-25" @default.
- W3120656667 title "CuGaSe2/ c-Si tandem solar cell exceeding 1.1 Volt Voc with ITO or tunnel junction at the interface" @default.
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- W3120656667 doi "https://doi.org/10.1109/pvsc45281.2020.9300793" @default.
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