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• W3121125748 abstract "Abstract As potential candidates for organic–inorganic hybrid perovskite materials, Pb-free Cs 2 SnI 6 has gained considerable attention because of their better stability under atmospheric conditions containing oxygen and water vapor. Herein, we fabricate Cs 2 SnI 6 films using the vapor-assisted deposition method with Sn and I 2 powders as reactants. To obtain uniform and pure Cs 2 SnI 6 films, two different reaction systems are applied and the properties of the samples are characterized via x-ray diffraction, scanning electron microscopy, UV–vis spectrometer, photoluminescence, and Hall-effect measurements. All the results showed a strong dependency on the reaction temperature and fabrication approach. Based on the preparation process in a closed system, we successfully inhibited the high temperature decomposition of Cs 2 SnI 6 even at 250 °C. However, in the open system, the reaction temperature of Cs 2 SnI 6 films should not be higher than 200 °C. Finally, n-type semiconducting Cs 2 SnI 6 films with bandgap ( E g ) of 1.32–1.54 eV, carrier concentration of 10 13 –10 16 cm −3 , and carrier mobility above 100 cm 2 V −1 s −1 are obtained due to the generated I-rich synthesis condition. We believe that our findings will provide beneficial guidance for the fabrication of Cs 2 SnI 6 perovskite solar cells." @default.
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• W3121125748 date "2021-01-25" @default.
• W3121125748 modified "2023-10-16" @default.
• W3121125748 title "A feasible process for lead-free Cs₂SnI₆ films using vapor-assisted deposition method with Sn and I₂ powders as reactants" @default.
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• W3121125748 doi "https://doi.org/10.1088/1361-6463/abd8f2" @default.
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