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• W3121504543 abstract "In-situ epitaxial growth of FeSe0.5Te0.5 thin films is demonstrated on a nonoxide substrate CaF2. Structural analysis reveals that compressive stress is moderately added to 36-nm-thick FeSe0.5Te0.5, which pushes up the critical temperature to above 15 K, showing higher values than that of bulk crystals. The critical current density at T = 4.5 K reaches 5.9×104 A cm-2 at µ0H = 10 T, and 4.2×104 A cm-2 at µ0H = 14 T. These results indicate that fluoride substrates have high potential for the growth of iron-based superconductors in comparison with popular oxide substrates." @default.
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• W3121504543 date "2011-05-09" @default.
• W3121504543 modified "2023-09-26" @default.
• W3121504543 title "Epitaxial Growth of FeSe_0.5Te_0.5Thin Films on CaF₂Substrates with High Critical Current Density" @default.
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• W3121504543 doi "https://doi.org/10.1143/apex.4.053101" @default.
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