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• W3121529845 abstract "Abstract The current saturation in a gateless AlGaN/GaN heterostructure device is investigated in this letter. Analysis of the micro-Raman spectroscopy results indicated that the self-heating effect could be eliminated by the 10 μ s pulse measurement. Based on the proposed multi-probe gateless AlGaN/GaN heterostructure device, the uniform channel depletion is experimentally verified even in the case of current saturation. The pre-stress measurement and transient current measurement results suggest that the surface traps with an extracted surface trap energy level of 0.13 eV are uniformly charged along the channel. Furthermore, a forward electron injection explanation is proposed and confirmed by TCAD simulation." @default.
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• W3121529845 date "2021-02-01" @default.
• W3121529845 modified "2023-09-25" @default.
• W3121529845 title "Investigation on mechanisms of current saturation in gateless AlGaN/GaN heterostructure device" @default.
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• W3121529845 doi "https://doi.org/10.35848/1347-4065/abde15" @default.
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