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• W3122014223 abstract "We report the characterization of the channel mobility properties of metal-oxide-semiconductor fieldeffect transistors (MOSFETs) on the heterogeneous β-Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> -on-SiC (GaOSiC) substrate fabricated by an ion-cutting process. The mobility of GaOSiC MOSFETs is significantly improved as the postannealing temperature of Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> channel increases from 900 °C to 1200 °C. The GaOSiC transistor annealed at 1200 °C exhibits mobility consistent with the β-Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> donor wafer, which suggests that the defects in Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> channel induced by the H <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>+</sup> implantation for the ion-cutting step can be eliminated by the high-temperature annealing. As the ambient temperature (T <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>amb</sub> ) increases from 0 °C to 150 °C, the mobility within the accumulation regime of GaOSiC MOSFETs decreases with the temperature following a T <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-1</sup> amb law, which is limited by the phonon scattering. The results of this work will be critically important for designing the transport properties of the GaOSiC channel, significantly advancing the development of Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> power devices on high thermal conductivity substrate." @default.
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• W3122014223 date "2021-03-01" @default.
• W3122014223 modified "2023-10-16" @default.
• W3122014223 title "Channel Properties of Ga₂O₃-on-SiC MOSFETs" @default.
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• W3122014223 doi "https://doi.org/10.1109/ted.2021.3051135" @default.
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