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- W3123199785 abstract "The demand for efficient power conversion systems that can process the energy at high power and voltage levels is increasing every day. These systems are to be used in microgrid applications. Wide-bandgap semiconductor devices (i.e. Silicon Carbide (SiC) and Gallium Nitride (GaN) devices) are very promising candidates due to their lower conduction and switching losses compared to the state-of-the-art Silicon (Si) devices. The main challenge for these devices is that their breakdown voltages are relatively lower compared to their Si counterpart. In addition, the high frequency operation of the wide-bandgap devices are impeded in many cases by the magnetic core losses of the magnetic coupling components (i.e. coupled inductors and/or high frequency transformers) utilized in the power converter circuit." @default.
- W3123199785 created "2021-02-01" @default.
- W3123199785 creator A5029124920 @default.
- W3123199785 date "2021-09-02" @default.
- W3123199785 modified "2023-10-05" @default.
- W3123199785 title "Isolated Single-stage Power Electronic Building Blocks Using Medium Voltage Series-stacked Wide-bandgap Switches" @default.
- W3123199785 doi "https://doi.org/10.25148/etd.fidc008842" @default.
- W3123199785 hasPublicationYear "2021" @default.
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