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• W3123284328 endingPage "435601" @default.
• W3123284328 startingPage "435601" @default.
• W3123284328 abstract "Topological insulators are a new class of materials that support topologically protected electronic surface states. Potential applications of the surface states in low dissipation electronic devices have motivated efforts to create nanoscale samples with large surface-to-volume ratios and highly controlled stoichiometry. Se vacancies in Bi2Se3 give rise to bulk conduction, which masks the transport properties of the surface states. We have therefore developed a new route for the synthesis of topological insulator nanostructures using metalorganic chemical vapour deposition (MOCVD). MOCVD allows for control of the Se/Bi flux ratio during growth. With the aim of rational growth, we vary the Se/Bi flux ratio, growth time, and substrate temperature, and observe morphological changes which indicate a growth regime in which nanoribbon formation is limited by the Bi precursor mass-flow. MOCVD growth of Bi2Se3 nanostructures occurs via a distinct growth mechanism that is nucleated by gold nanoparticles at the base of the nanowire. By tuning the reaction conditions, we obtain either single-crystalline ribbons up to 10 microns long or thin micron-sized platelets." @default.
• W3123284328 created "2021-02-01" @default.
• W3123284328 creator A5002847180 @default.
• W3123284328 creator A5088568917 @default.
• W3123284328 date "2012-10-11" @default.
• W3123284328 modified "2023-09-25" @default.
• W3123284328 title "Controlled MOCVD growth of Bi₂Se₃topological insulator nanoribbons" @default.
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• W3123284328 doi "https://doi.org/10.1088/0957-4484/23/43/435601" @default.
• W3123284328 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/23059371" @default.
• W3123284328 hasPublicationYear "2012" @default.
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