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• W3124357002 abstract "Abstract Published experimental data on the variation of the Y sputtering yield with the S e electronic stopping power are analyzed. Systematic results for amorphizable (SiO 2 , SrCeO 3 , SrTiO 3, CeO 2 ) and non- amorphizable (LiF, KBr) insulators and semiconducting TiO 2 , ZnO, SiC, UO 2 are used. Thermal activation mechanism of electronic sputtering is assumed. The ion-induced temperature is estimated applying the Analytical Thermal Spike Model. A highly accurate description of the experimental Y-S e data is given in the whole range of S e without the application of individual materials parameters apart the U activation energy. The values of U for SiO 2 and UO 2 , are considerably lower than the U s sublimation energies. Sputtering proceeds without threshold of S e ." @default.
• W3124357002 created "2021-02-01" @default.
• W3124357002 creator A5083050727 @default.
• W3124357002 date "2021-01-11" @default.
• W3124357002 modified "2023-09-26" @default.
• W3124357002 title "Uniform analysis of electronic sputtering in amorphizable and non-amorphizable insulators and semiconductors" @default.
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• W3124357002 doi "https://doi.org/10.1088/1402-4896/abd794" @default.
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