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- W3124363531 abstract "In this Letter, we demonstrate mid-infrared (MIR) lateral <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline> <mml:mi>p</mml:mi> <mml:mrow class=MJX-TeXAtom-ORD> <mml:mo>−<!-- − --></mml:mo> </mml:mrow> <mml:mi>i</mml:mi> <mml:mrow class=MJX-TeXAtom-ORD> <mml:mo>−<!-- − --></mml:mo> </mml:mrow> <mml:mi>n</mml:mi> </mml:math> GeSn waveguide photodetectors (WGPDs) on silicon, to the best of our knowledge for the first time, as a key enabler of MIR electronic–photonic integrated circuits (EPICs). Narrow-bandgap GeSn alloys were employed as the active material to enable efficient photodetection in the MIR region. A lateral <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline> <mml:mi>p</mml:mi> <mml:mrow class=MJX-TeXAtom-ORD> <mml:mo>−<!-- − --></mml:mo> </mml:mrow> <mml:mi>i</mml:mi> <mml:mrow class=MJX-TeXAtom-ORD> <mml:mo>−<!-- − --></mml:mo> </mml:mrow> <mml:mi>n</mml:mi> </mml:math> homojunction diode was designed and fabricated to significantly enhance the optical confinement factor of the guided modes and thus enhance the optical responsivity. Thus, a photodetection range of up to 1950 nm and a good responsivity of 0.292 A/W at 1800 nm were achieved. These results demonstrate the feasibility of planar GeSn WGPDs for monolithic MIR EPICs on silicon." @default.
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- W3124363531 date "2021-02-10" @default.
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- W3124363531 title "GeSn lateral p-i-n waveguide photodetectors for mid-infrared integrated photonics" @default.
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- W3124363531 doi "https://doi.org/10.1364/ol.414580" @default.
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