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- W3125011663 abstract "Metal-insulator-metal tunnel junctions (MIMTJs) have become a fundamental enabling technology for microelectronics, and obtaining a well controlled, atomically thin, high-quality insulating tunnel barrier is key to their progress. Through experiment and simulations, the authors establish an atomic-layer deposition process to make ultrathin Al${}_{2}$O${}_{3}$ barriers of superior quality to industry-standard AlO${}_{x}$. Their method can improve magnetic tunnel junctions or Josephson junctions, for example, and thus a host of applications." @default.
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- W3125011663 date "2017-06-16" @default.
- W3125011663 modified "2023-10-15" @default.
- W3125011663 title "Atomically Thin <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mrow><mml:msub><mml:mrow><mml:mi>Al</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mi mathvariant=normal>O</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math> Films for Tunnel Junctions" @default.
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- W3125011663 doi "https://doi.org/10.1103/physrevapplied.7.064022" @default.
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