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• W3125346042 abstract "Complex oxides present a rich spectrum of electronic and magnetic properties, of interest for both functional devices and fundamental research. The authors utilize the two-dimensional electron liquid at the LaAlO${}_{3}$/SrTiO${}_{3}$ interface as a drain-source channel, plus advanced electron-beam lithography, to create field-effect transistors (FETs) with gate lengths down to 60 nm. Most of their properties are attributable to short-channel effects, as in semiconductor FETs, yet there are several characteristic differences as well." @default.
• W3125346042 created "2021-02-01" @default.
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• W3125346042 date "2015-12-14" @default.
• W3125346042 modified "2023-09-27" @default.
• W3125346042 title "Field-Effect Transistors with Submicrometer Gate Lengths Fabricated from<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mrow><mml:msub><mml:mrow><mml:mi>LaAlO</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub><mml:mtext>−</mml:mtext><mml:msub><mml:mrow><mml:mi>SrTiO</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>-Based Heterostructures" @default.
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• W3125346042 doi "https://doi.org/10.1103/physrevapplied.4.064003" @default.
• W3125346042 hasPublicationYear "2015" @default.
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