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- W3125626963 abstract "Monolithic pixel sensors for charged particle detection and imaging applications have been designed and fabricated using commercially available, deep-submicron Silicon-On-Insulator (SOI) processes, which insulate a thin layer of integrated full CMOS electronics from a high-resistivity substrate by means of a buried oxide. The substrate is contacted from the electronics layer through vias etched in the buried oxide, allowing pixel implanting and reverse biasing. This paper summarizes the performances achieved with a first prototype manufactured in the OKI 0.15 μm FD-SOI process, featuring analog and digital pixels on a 10 μm pitch. The design and preliminary results on the analog section of a second prototype manufactured in the OKI 0.20 μm FD-SOI process are briefly discussed." @default.
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- W3125626963 date "2009-04-15" @default.
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- W3125626963 title "Monolithic pixel sensors in deep-submicron SOI Technology" @default.
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- W3125626963 doi "https://doi.org/10.1088/1748-0221/4/04/p04007" @default.
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