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• W3125949255 endingPage "2009" @default.
• W3125949255 startingPage "2003" @default.
• W3125949255 abstract "Ultrathin-body (UTB) (111) InAs-On-Insulator (InAs-OI) n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) are proposed as a new technology booster using the L valley conduction in III-V channels. The performance of the conventional UTB III-V nMOSFETs is limited by the essential band features of the Γ valley conduction such as the low density of states, resulting in low inversion capacitance, and the light effective mass m <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>z</sub> along the confinement direction, resulting in strong thickness fluctuation scattering. The strong confinement of electrons by a combination of (111) surface orientation and UTB InAs-OI structures is expected to transfer the electrons into the L valley with much heavier m <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>z</sub> than in the Γ valley, leading to higher semiconductor capacitance and suppression of thickness fluctuation scattering. We also experimentally demonstrate the UTB (111) InAs-OI nMOSFETs operation with thinning the InAs channels down to 3 nm, realized by the smart-cut and digital etching process. Channel thickness scaling improves both the OFF- and ON-currents by expansion of the effective bandgap. It is shown that the measured mobility increases with decreasing InAs-OI thickness from 4.8 to 4.4 nm, which is attributable to the increase in the electron occupancy in the L valley." @default.
• W3125949255 created "2021-02-01" @default.
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• W3125949255 date "2021-04-01" @default.
• W3125949255 modified "2023-10-18" @default.
• W3125949255 title "Proposal and Experimental Demonstration of Ultrathin-Body (111) InAs-On-Insulator nMOSFETs With L Valley Conduction" @default.
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• W3125949255 doi "https://doi.org/10.1109/ted.2021.3049455" @default.
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