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• W3125994603 abstract "Using a solid-state reaction approach, the structural and electrical parameters of CaCu 2.90 Ni 0.10 Ti 4- x Ge x O 12 ( x = 0.05 and 0.10) ceramics were successfully studied. A single-phase of CaCu 3 Ti 4 O 12 , JCPDS No. 75–2188, was observed in all-ceramic samples. The microstructural changes of these CaCu 2.90 Ni 0.10 Ti 4- x Ge x O 12 ceramics were directly associated with a liquid-phase sintering mechanism. Investigation of the origin of the liquid-phase sintering mechanism, done using density functional theory, showed that the presence of Ge 4+ ions at Cu 2+ sites results in a significant decomposition of the related Cu phases. Interestingly, compared to this material with x = 0 (our previous work), the dielectric permittivity of CaCu 2.90 Ni 0.10 Ti 3.95 Ge 0.05 O 12 and CaCu 2.90 Ni 0.10 Ti 3.90 Ge 0.10 O 12 ceramics was meaningfully increased by 24.42% and 43.32%, respectively. Additionally, the loss tangents of these two ceramics were still very low (~0.030–0.035). The low loss tangents observed in CaCu 2.90 Ni 0.10 Ti 4- x Ge x O 12 ceramics might have originated from oxygen-enrichment at grain boundaries and a metastable insulating layer at grain boundary layers. The result of DC bias trials shows that the dielectric response of CaCu 2.90 Ni 0.10 Ti 4- x Ge x O 12 ceramics arises mainly from an internal barrier layer capacitor effect." @default.
• W3125994603 created "2021-02-01" @default.
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• W3125994603 date "2021-05-01" @default.
• W3125994603 modified "2023-09-24" @default.
• W3125994603 title "Origins of a liquid-phase sintering mechanism and giant dielectric properties of Ni+Ge co-doped CaCu3Ti4O12 ceramics" @default.
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• W3125994603 doi "https://doi.org/10.1016/j.ceramint.2021.01.199" @default.
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