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- W3126140989 abstract "Crossbar resistive memory with 1 Selector 1 Resistor (181R) structure is attractive for low-cost and highdensity nonvolatile memory applications. As technology scales down to the single-nm regime, the increasing resistivity of wordline/bitline becomes a limiting factor to device reliability. This paper presents write/read communication channels while considering the line resistance and device variabilities by statistically relating the degraded write/read margins and the channel parameters. Binary asymmetric channel (BAC) models are proposed for the write/read operations. Simulations based on these models suggest that the bit-error rate of devices are highly non-uniform across the memory array. These models provide quantitative tools for evaluating the trade-offs between memory reliability and design parameters, such as array size, technology nodes, and aspect ratio, and also for designing coding-theoretic solutions that would be most effective for crossbar memory." @default.
- W3126140989 created "2021-02-01" @default.
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- W3126140989 date "2020-12-01" @default.
- W3126140989 modified "2023-09-24" @default.
- W3126140989 title "Write and Read Channel Models for 1S1R Crossbar Resistive Memory with High Line Resistance" @default.
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- W3126140989 doi "https://doi.org/10.1109/globecom42002.2020.9322521" @default.
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