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• W3126185655 abstract "In this work, we demonstrated that ${p}$ -type and ${n}$ -type conduction could be induced in unintentionally doped pristine monolayer (ML) WS2 by forming a hybrid WS2/InGaN quantum dots (QDs) heterostructure, in which the ML-WS2 is partially covered by few-layer graphene. Under illumination, the photo-generated holes or electrons in the QDs were injected vertically into the ML-WS2 and then transported laterally therein. The polarity of the WS2 channel can be controlled by the bias applied to the graphene electrode. This work provides a potential approach to develop ambipolar devices of ML transition metal dichalcogenides through photocarrier doping." @default.
• W3126185655 created "2021-02-15" @default.
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• W3126185655 date "2021-03-01" @default.
• W3126185655 modified "2023-10-14" @default.
• W3126185655 title "Ambipolar Photocarrier Doping and Transport in Monolayer WS₂ by Forming a Graphene/WS₂/Quantum Dots Heterostructure" @default.
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• W3126185655 doi "https://doi.org/10.1109/led.2021.3051304" @default.
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