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- W3126405669 abstract "With the emergence of phase change memory, where the devices experience extreme thermal gradients (∼100 K/nm) during transitions between low and high resistive states, the study of thermoelectric effects at small scales becomes particularly relevant. We had earlier observed asymmetric melting of self-heated nano-crystalline silicon micro-wires, where current densities of ∼107 A/cm2 were forced through the wires by 1 μs, ∼30 V pulses. The extreme asymmetry can be explained by the generation of considerable amount of minority carriers, transport under the electric field, and recombination downstream, a heat transfer process we termed as generation–transport–recombination, which is in opposite direction of the electronic-convective heat carried by the majority carriers. Here, we present a full semiconductor physics treatment of this carrier-lattice heat transport mechanism and the contribution of the minority carriers on the evolution of the melt–solid interface, which can be applied to various high-temperature electronic devices." @default.
- W3126405669 created "2021-02-15" @default.
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- W3126405669 date "2021-02-05" @default.
- W3126405669 modified "2023-09-23" @default.
- W3126405669 title "Incorporation of GTR (generation–transport–recombination) in semiconductor simulations" @default.
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- W3126405669 doi "https://doi.org/10.1063/5.0037411" @default.
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