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• W3126414081 abstract "This work studies the effects of the temperature variation, from 300K to 500K, on the electrical parameters of SOI n-type and p-type junctionless nanowire transistors. The temperature influence on the threshold voltage, subthreshold slope, and the effective carrier mobility were analyzed. The mobility scattering mechanisms were analyzed and show that nanowire devices have the phonon scattering as their major component, although there is a significant component of the ionized impurity scattering that can be identified as well. These electrical parameters were also analyzed for short channel devices with a channel length of 40nm. P-type devices showed higher degradation with the temperature as the doping concentration is higher than n-type devices." @default.
• W3126414081 created "2021-02-15" @default.
• W3126414081 creator A5068051865 @default.
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• W3126414081 date "2021-01-01" @default.
• W3126414081 modified "2023-10-14" @default.
• W3126414081 title "Analysis of the Electrical Parameters of SOI Junctionless Nanowire Transistors at High Temperatures" @default.
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• W3126414081 doi "https://doi.org/10.1109/jeds.2021.3051500" @default.
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