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• W3127079056 abstract "For those InGaN QWs exhibiting fixed In composition and thickness, the growth conditions of low TMIn flow and high pressure significantly help remedy defects and In-clusters of InGaN QW. • Both high In flow rate and high pressure will improve the incorporation of In atoms undergoing material deterioration. • Low TMIn flow significantly reduce the density of small V-defects associated with In-rich clusters. • The correlations between In-rich clusters and trench defects are revealed. Two series InGaN/GaN MQWs samples were prepared by metal-organic chemical vapor deposition (MOCVD) to study the effect of TMIn flow and pressure on structural parameters, emission propertied and surface morphology of InGaN well layer. This study revealed that both high In flow rate and high pressure will improve the incorporation of atoms undergoing material deterioration. However, an elevated pressure will expedite the incorporation of indium atoms while maintaining the surface morphology of InGaN well layer under low TMIn flow. For those InGaN QWs exhibiting fixed In composition and thickness, this study proposed to decrease the TMIn flow to improve the homogeneity and quality of InGaN layer, while increasing pressure to keep the In content unchanged." @default.
• W3127079056 created "2021-02-15" @default.
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• W3127079056 date "2021-05-01" @default.
• W3127079056 modified "2023-09-26" @default.
• W3127079056 title "Improving the homogeneity and quality of InGaN/GaN quantum well exhibiting high In content under low TMIn flow and high pressure growth" @default.
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• W3127079056 doi "https://doi.org/10.1016/j.apsusc.2021.149272" @default.
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