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- W3127844140 abstract "Wide-gap semiconductor SiC is generally considered as a superior candidate for high-radiation applications, due to its higher displacement energy for both Si and C lattice atoms. In this work, we find that the current gain (β) of 4H-SiC bipolar junction transistors (BJTs) can severely deteriorate after neutron irradiation. Deep-level transient spectroscopy (DLTS) reveals that two major carrier-killer centers, Z1/2 and EH6/7, were produced in neutron-irradiated devices. Surprisingly, we find that the shallow Z1/2 center can play a dominant role over the deep EH6/7 defects in carrier recombination under high-injection conditions, which contributes to the unusual smaller hole capture cross section than that of the electron one, as indicated by the first-principles calculations. Finally, technology computer aided design (TCAD) simulation confirms that the enhanced carrier recombination from the Z1/2 centers is responsible for the degraded performance of SiC BJTs after irradiation. Our findings not only provide a deep insight into the underlying physics for displacement damage in SiC BJTs, but also are of interest for technological applications field related to high-energy particle irradiation or implantation." @default.
- W3127844140 created "2021-02-15" @default.
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- W3127844140 date "2021-03-01" @default.
- W3127844140 modified "2023-10-12" @default.
- W3127844140 title "Relating Gain Degradation to Defects Production in Neutron-Irradiated 4H-SiC Transistors" @default.
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- W3127844140 doi "https://doi.org/10.1109/tns.2021.3056662" @default.
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