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• W3128169148 abstract "In this Letter, enhancement-mode operation in devices with 1.5 nm atomic-layer thin In2O3 channels over a wide range of channel lengths down to 40 nm is demonstrated using an O2 plasma treatment at room temperature. Drain currents (ID) in excess of 2 A/mm at a drain-to-source bias (VDS) of 0.7 V are achieved in enhancement mode with significantly improved subthreshold swing down to near-ideal 65 mV/dec, suggesting that O2 plasma treatment is very effective at reducing bulk and interface defects. By using low-temperature O2 plasma, the fabrication process remains back-end-of-line compatible while enabling a clear route toward high-performance In2O3 transistors and circuitry." @default.
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• W3128169148 date "2021-02-01" @default.
• W3128169148 modified "2023-10-16" @default.
• W3128169148 title "Enhancement-mode atomic-layer thin In₂O₃ transistors with maximum current exceeding 2 A/mm at drain voltage of 0.7 V enabled by oxygen plasma treatment" @default.
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• W3128169148 doi "https://doi.org/10.1063/5.0039783" @default.
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