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- W3128953012 abstract "The photo response induced by far infrared radiation interacting with electrons in silicon inversion layers at 4.2°K can be associated with at least five distinct processes. Of these, four can be attributed directly to the physics of the quasi-two dimensional electron system. The response can be either photoresistive or photo-conductive, each type characterized by a distinct response time, magnitude and temperature dependence as well as a resonant or broad band response with respect to photon energy. It is now accepted that as the electron density is increased, initially an electron localization occurs as evidenced by a thermally activated conductivity. In high mobility samples at electron densities greater than ∼ 5×10” electrons/cm2 the conductivity becomes metallic in nature. The observed responses manifest both of these conditions as well as the quantization induced by the electric field perpendicular to the surface." @default.
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- W3128953012 date "1976-12-01" @default.
- W3128953012 modified "2023-09-26" @default.
- W3128953012 title "Far Infrared Photo-Response of Silicon Inversion Layers" @default.
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- W3128953012 doi "https://doi.org/10.1109/icswa.1976.9350015" @default.
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