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• W3128953773 abstract "The development of novel low-dimensional materials makes the metallic contact to nanostructure facing challenges. Compared to side contacts, end-bonded contacts are proposed to be more effective pathways for charge injection and extraction. However, there is a lack of up-to-date understanding regarding end-bonded contacts, especially the recently emerged high-performance field-effect transistors (FETs). Here, the end-bonded contacts in tellurium (Te) transistors are first achieved by inducing metal semiconductor alloy. The formation of Pd–Te alloy structure is confirmed by a high-resolution transmission electron microscope (HRTEM) in Te-nanorod-based FETs. The ultralow specific contact resistance is estimated to be 5.1 × 10–9 Ω cm2 by the transmission line mode. On the basis of this finding, Te FETs are shown to exhibit incredible electronic properties, metal-insulator transition, and photodetection performance. This in-depth investigation of the end-bonded contact between Pd and Te speeds up the potential application of Te nanostructure and provides a feasible method for contact engineering in advanced devices." @default.
• W3128953773 created "2021-02-15" @default.
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• W3128953773 date "2021-02-05" @default.
• W3128953773 modified "2023-10-15" @default.
• W3128953773 title "End-Bonded Contacts of Tellurium Transistors" @default.
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• W3128953773 doi "https://doi.org/10.1021/acsami.0c21675" @default.
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• W3128953773 hasPublicationYear "2021" @default.
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