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• W3129416404 endingPage "14965" @default.
• W3129416404 startingPage "14944" @default.
• W3129416404 abstract "With advances in nanotechnology, nanowires have gained worldwide attention because of their novel properties and promising applications. Among them, silicon nitride (Si3N4) nanowires have attracted increasing attention due to their excellent performance and huge application potential. In this review, various synthesis methods of Si3N4 nanowires are introduced in detail, and then the growth mechanisms are also stated. Subsequently, the novel properties of Si3N4 nanowires including mechanical, optical, electrical, thermal, and wetting performance are highlighted. Applications corresponding to performance are also summarized later, such as composites, field emitters, field-effect transistors (FETs), photodetectors, photocatalysts, and microwave absorbers. Finally, the contents of this article are concluded and outlooks of future research directions are stated. This article reviews the recent advances and provides the prospects and challenges of Si3N4 nanowires." @default.
• W3129416404 created "2021-03-01" @default.
• W3129416404 creator A5003158162 @default.
• W3129416404 creator A5048854084 @default.
• W3129416404 creator A5068868351 @default.
• W3129416404 creator A5078015953 @default.
• W3129416404 creator A5083060640 @default.
• W3129416404 date "2021-06-01" @default.
• W3129416404 modified "2023-10-13" @default.
• W3129416404 title "Recent progress in synthesis, growth mechanisms, properties, and applications of silicon nitride nanowires" @default.
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