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• W3129552655 abstract "Abstract Au/(nanocarbon-PVP)/n-Si SDs were fabricated and their current-conduction mechanisms (CCMs) have been examined in elaborative by utilizing current-voltage (I-V) characteristics in temperature range of 60-340K at (± 3V) ranges. The values of ideality factor (n) and zero-bias barrier height (Φ Bo ) determined from the linear-part of semilogarithmic forward bias I F -V F properties based on Thermionic-Emission (TE) theory revealed that decrease in Φ Bo and increase in n with deccreasing temperature. Additionally, Richardson constant (A*) value was found several orders lower than its theoretical value. The values of Φ Bo and n changed from 0.173 eV to 0.837 eV and 6.60 to 2.85 with increasing temperature from 60 K to 340 K. This positive temperature-coefficient (α) of Φ Bo is inagreement with the bandgap of semiconductor or barrier height (BH) for the ideal diode. The calculated higher value of n at low temperatures was attributed to the inhomogeneities of BH rather than the interlayer, surface-states (N ss ), and image-force lowering. With lowing temperatures, CCMs may be governed by tunneling over the lower barriers, via N ss , and generation recombination (GR), as well as TE and hence a complete description of CCM and understanding of the formation BH, remain a compelling problem. N ss -(E c -E ss ) profile was also obtained from I F -V F data for each temperature." @default.
• W3129552655 created "2021-03-01" @default.
• W3129552655 creator A5075458445 @default.
• W3129552655 date "2021-02-09" @default.
• W3129552655 modified "2023-09-26" @default.
• W3129552655 title "On the Examination of Temperature-Dependent Possible Current-Conduction Mechanisms of Au/(nanocarbon-PVP)/n-Si Schottky Barrier Diodes in Wide Range of Voltage" @default.
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• W3129552655 doi "https://doi.org/10.21203/rs.3.rs-194859/v1" @default.
• W3129552655 hasPublicationYear "2021" @default.
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