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- W3131151888 abstract "We have developed fabrication approaches and studied the optical properties of arrays of submicrometer sized InGaN/GaN MQW posts, created by patterning and etching of epitaxially grown wafer material. Two approaches have been employed: a) electron beam lithography, by which posts of individual diameter of 100 nm have been realized; b) the use of nanometer-scale self-assembled templates of porous alumina as masks, to fabricate posts on a 50 nm scale. Robust violet light emission at room temperature has been observed in such nanoscale structures." @default.
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- W3131151888 date "2001-11-01" @default.
- W3131151888 modified "2023-10-18" @default.
- W3131151888 title "Fabrication of 50–100 nm Patterned InGaN Blue Light Emitting Heterostructures" @default.
- W3131151888 doi "https://doi.org/10.1002/1521-396x(200111)188:1<135::aid-pssa135>3.3.co;2-o" @default.
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