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• W3131486295 abstract "Purpose High packaging density in the present VLSI era builds an acute power crisis, which limits the use of MOSFET device as a constituent block in CMOS technology. This leads researchers in looking for alternative devices, which can replace the MOSFET in CMOS VLSI logic design. In a quest for alternative devices, tunnel field effect transistor emerged as a potential alternative in recent times. The purpose of this study is to enhance the performances of the proposed device structure and make it compatible with circuit implementation. Finally, the performances of that circuit are compared with CMOS circuit and a comparative study is made to find the superiority of the proposed circuit with respect to conventional CMOS circuit. Design/methodology/approach Silicon–germanium heterostructure is currently one of the most promising architectures for semiconductor devices such as tunnel field effect transistor. Analytical modeling is computed and programmed with MATLAB software. Two-dimensional device simulation is performed by using Silvaco TCAD (ATLAS). The modeled results are validated through the ATLAS simulation data. Therefore, an inverter circuit is implemented with the proposed device. The circuit is simulated with the Tanner EDA tool to evaluate its performances. Findings The proposed optimized device geometry delivers exceptionally low OFF current (order of 10^−18 A/um), fairly high ON current (5x10^−5 A/um) and a steep subthreshold slope (20 mV/decade) followed by excellent ON–OFF current ratio (order of 10^13) compared to the similar kind of heterostructures. With a very low threshold voltage, even lesser than 0.1 V, the proposed device emerged as a good replacement of MOSFET in CMOS-like digital circuits. Hence, the device is implemented to construct a resistive inverter to study the circuit performances. The resistive inverter circuit is compared with a resistive CMOS inverter circuit. Both the circuit performances are analyzed and compared in terms of power dissipation, propagation delay and power-delay product. The outcomes of the experiments prove that the performance matrices of heterojunction Tunnel FET (HTFET)-based inverter are way ahead of that of CMOS-based inverter. Originality/value Germanium–silicon HTFET with stack gate oxide is analytically modeled and optimized in terms of performance matrices. The device performances are appreciable in comparison with the device structures published in contemporary literature. CMOS-like resistive inverter circuit, implemented with this proposed device, performs well and outruns the circuit performances of the conventional CMOS circuit at 45-nm technological node." @default.
• W3131486295 created "2021-03-01" @default.
• W3131486295 creator A5031054602 @default.
• W3131486295 creator A5035679527 @default.
• W3131486295 creator A5040273265 @default.
• W3131486295 date "2021-02-25" @default.
• W3131486295 modified "2023-10-16" @default.
• W3131486295 title "Analysis of circuit performance of Ge-Si hetero structure TFET based on analytical model" @default.
• W3131486295 cites W1501836496 @default.
• W3131486295 cites W1971714914 @default.
• W3131486295 cites W1974160001 @default.
• W3131486295 cites W1992926203 @default.
• W3131486295 cites W2009624223 @default.
• W3131486295 cites W2079185511 @default.
• W3131486295 cites W2172207456 @default.
• W3131486295 cites W2218950696 @default.
• W3131486295 cites W2270125711 @default.
• W3131486295 cites W2551113816 @default.
• W3131486295 cites W2586844682 @default.
• W3131486295 cites W2596257285 @default.
• W3131486295 cites W2769173830 @default.
• W3131486295 cites W2787941958 @default.
• W3131486295 cites W2791214619 @default.
• W3131486295 cites W2808398937 @default.
• W3131486295 cites W2922205224 @default.
• W3131486295 cites W2937936712 @default.
• W3131486295 cites W2959356401 @default.
• W3131486295 cites W2965011462 @default.
• W3131486295 cites W2991991169 @default.
• W3131486295 cites W2992814163 @default.
• W3131486295 cites W3016286676 @default.
• W3131486295 doi "https://doi.org/10.1108/cw-08-2020-0175" @default.
• W3131486295 hasPublicationYear "2021" @default.
• W3131486295 type Work @default.
• W3131486295 sameAs 3131486295 @default.
• W3131486295 citedByCount "3" @default.
• W3131486295 countsByYear W31314862952021 @default.
• W3131486295 countsByYear W31314862952023 @default.
• W3131486295 crossrefType "journal-article" @default.
• W3131486295 hasAuthorship W3131486295A5031054602 @default.
• W3131486295 hasAuthorship W3131486295A5035679527 @default.
• W3131486295 hasAuthorship W3131486295A5040273265 @default.
• W3131486295 hasConcept C11190779 @default.
• W3131486295 hasConcept C119599485 @default.
• W3131486295 hasConcept C127413603 @default.
• W3131486295 hasConcept C134146338 @default.
• W3131486295 hasConcept C14580979 @default.
• W3131486295 hasConcept C156465305 @default.
• W3131486295 hasConcept C165801399 @default.
• W3131486295 hasConcept C172385210 @default.
• W3131486295 hasConcept C190560348 @default.
• W3131486295 hasConcept C24326235 @default.
• W3131486295 hasConcept C2778413303 @default.
• W3131486295 hasConcept C41008148 @default.
• W3131486295 hasConcept C46205389 @default.
• W3131486295 hasConcept C46362747 @default.
• W3131486295 hasConcept C4775677 @default.
• W3131486295 hasConceptScore W3131486295C11190779 @default.
• W3131486295 hasConceptScore W3131486295C119599485 @default.
• W3131486295 hasConceptScore W3131486295C127413603 @default.
• W3131486295 hasConceptScore W3131486295C134146338 @default.
• W3131486295 hasConceptScore W3131486295C14580979 @default.
• W3131486295 hasConceptScore W3131486295C156465305 @default.
• W3131486295 hasConceptScore W3131486295C165801399 @default.
• W3131486295 hasConceptScore W3131486295C172385210 @default.
• W3131486295 hasConceptScore W3131486295C190560348 @default.
• W3131486295 hasConceptScore W3131486295C24326235 @default.
• W3131486295 hasConceptScore W3131486295C2778413303 @default.
• W3131486295 hasConceptScore W3131486295C41008148 @default.
• W3131486295 hasConceptScore W3131486295C46205389 @default.
• W3131486295 hasConceptScore W3131486295C46362747 @default.
• W3131486295 hasConceptScore W3131486295C4775677 @default.
• W3131486295 hasIssue "ahead-of-print" @default.
• W3131486295 hasLocation W31314862951 @default.
• W3131486295 hasOpenAccess W3131486295 @default.
• W3131486295 hasPrimaryLocation W31314862951 @default.
• W3131486295 hasRelatedWork W1007507 @default.
• W3131486295 hasRelatedWork W10152786 @default.
• W3131486295 hasRelatedWork W10956182 @default.
• W3131486295 hasRelatedWork W6133909 @default.
• W3131486295 hasRelatedWork W6496871 @default.
• W3131486295 hasRelatedWork W8038244 @default.
• W3131486295 hasRelatedWork W8192213 @default.
• W3131486295 hasRelatedWork W8816196 @default.
• W3131486295 hasRelatedWork W8991173 @default.
• W3131486295 hasRelatedWork W8691772 @default.
• W3131486295 hasVolume "ahead-of-print" @default.
• W3131486295 isParatext "false" @default.
• W3131486295 isRetracted "false" @default.
• W3131486295 magId "3131486295" @default.
• W3131486295 workType "article" @default.