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- W3131502918 abstract "The development of EUV lithography has been enabled by the resist material design which had initially adapted of known concepts from DUV lithography. But with the low number of photon counts in EUV has brought stochastics defects as a significant concern to enable yield. This paper will review the development on resist concepts that have targeted limiting variations in resist design to mitigate stochastic defects. The limits of this trade-off between improving stochastics-related defects with a higher dose will also be discussed. How strongly does the resist formulation itself contribute to stochastics, or is it a purely dose-driven effect? Along with the resist the patterning stack has a more significant effect in EUV patterning Due to the thickness decrease in the resist and the underlying stack, the interfacial effects of the resist and hardmask films play a dominant factor in the material stochastics. This offers an opportunity to think differently about underlayer design for sub-32nm pitch patterning. The choice of hardmask can be used to modulate post-litho defectivity to mitigate the stochastics effects and enable more efficient pattern transfer. This paper will address multiple approaches to improving the materials stochastics through resist component optimization and hardmask film development. It will also demonstrate how the methodology of defectivity at post-exposure and post-etch are correlated to electrical yield to validate material evaluations" @default.
- W3131502918 created "2021-03-01" @default.
- W3131502918 creator A5072590585 @default.
- W3131502918 date "2021-02-22" @default.
- W3131502918 modified "2023-09-24" @default.
- W3131502918 title "Progress and challenges of EUV patterning material design" @default.
- W3131502918 doi "https://doi.org/10.1117/12.2582476" @default.
- W3131502918 hasPublicationYear "2021" @default.
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