FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W3132742487> ?p ?o ?g. }

• W3132742487 endingPage "6824" @default.
• W3132742487 startingPage "6818" @default.
• W3132742487 abstract "Semiconducting two-dimensional (2D) layered materials have shown great potential in next-generation electronics due to their novel electronic properties. However, the performance of field effect transistors (FETs) based on 2D materials is always environment-dependent and unstable under gate bias stress. Here, we report the environment-dependent performance and gate-induced instability of few-layer p-type WSe2-based FETs. We found that the hole mobility of the transistor drastically reduces in vacuum and further decreases after in situ annealing in vacuum compared with that in air, which can be recovered after exposure to air. The on-current of the WSe2 FET increases with positive gate bias stress time but decreases with negative gate bias stress time. For the double sweeping transfer curve, the transistor shows prominent hysteresis, which depends on both the sweeping rate and the sweeping range. Large hysteresis can be observed when a slow sweeping rate or large sweeping range is applied. In addition, such gate-induced instability can be reduced in vacuum and further reduced after in situ vacuum annealing. However, the gate-induced instability cannot be fully eliminated, which suggests both gases adsorbed on the device and defects in the WSe2 channel and/or the interface of WSe2/SiO2 are responsible for the gate-induced instability. Our results provide a deep understanding of the gate-induced instability in p-type WSe2 based transistors, which may shed light on the design of high-performance 2D material-based electronics." @default.
• W3132742487 created "2021-03-01" @default.
• W3132742487 creator A5014334325 @default.
• W3132742487 creator A5015237857 @default.
• W3132742487 creator A5021328683 @default.
• W3132742487 creator A5033080900 @default.
• W3132742487 creator A5039831508 @default.
• W3132742487 creator A5042340205 @default.
• W3132742487 creator A5065037360 @default.
• W3132742487 creator A5067411623 @default.
• W3132742487 creator A5069002782 @default.
• W3132742487 creator A5083546610 @default.
• W3132742487 date "2021-01-01" @default.
• W3132742487 modified "2023-10-16" @default.
• W3132742487 title "Gate-bias instability of few-layer WSe₂ field effect transistors" @default.
• W3132742487 cites W1967213605 @default.
• W3132742487 cites W1981746506 @default.
• W3132742487 cites W1992472539 @default.
• W3132742487 cites W2001791509 @default.
• W3132742487 cites W2011189565 @default.
• W3132742487 cites W2011899447 @default.
• W3132742487 cites W2024966938 @default.
• W3132742487 cites W2026386847 @default.
• W3132742487 cites W2040077883 @default.
• W3132742487 cites W2048513650 @default.
• W3132742487 cites W2069001158 @default.
• W3132742487 cites W2076925904 @default.
• W3132742487 cites W2112549606 @default.
• W3132742487 cites W2115786064 @default.
• W3132742487 cites W2123809476 @default.
• W3132742487 cites W2142898940 @default.
• W3132742487 cites W2167452346 @default.
• W3132742487 cites W2223338285 @default.
• W3132742487 cites W2237156478 @default.
• W3132742487 cites W2278636676 @default.
• W3132742487 cites W2318692914 @default.
• W3132742487 cites W2322923573 @default.
• W3132742487 cites W2326584007 @default.
• W3132742487 cites W2332278225 @default.
• W3132742487 cites W2336286641 @default.
• W3132742487 cites W2465195419 @default.
• W3132742487 cites W2473749121 @default.
• W3132742487 cites W2497842181 @default.
• W3132742487 cites W2508920067 @default.
• W3132742487 cites W2520148846 @default.
• W3132742487 cites W2597054437 @default.
• W3132742487 cites W2605339079 @default.
• W3132742487 cites W2606477349 @default.
• W3132742487 cites W2627001981 @default.
• W3132742487 cites W2737646940 @default.
• W3132742487 cites W2763869320 @default.
• W3132742487 cites W2765336661 @default.
• W3132742487 cites W2802407191 @default.
• W3132742487 cites W2920955050 @default.
• W3132742487 cites W2970501323 @default.
• W3132742487 cites W2975458838 @default.
• W3132742487 cites W3028117717 @default.
• W3132742487 cites W3083244887 @default.
• W3132742487 cites W3099418496 @default.
• W3132742487 cites W3102637849 @default.
• W3132742487 cites W3103861557 @default.
• W3132742487 doi "https://doi.org/10.1039/d0ra09376a" @default.
• W3132742487 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/35423215" @default.
• W3132742487 hasPublicationYear "2021" @default.
• W3132742487 type Work @default.
• W3132742487 sameAs 3132742487 @default.
• W3132742487 citedByCount "5" @default.
• W3132742487 countsByYear W31327424872022 @default.
• W3132742487 countsByYear W31327424872023 @default.
• W3132742487 crossrefType "journal-article" @default.
• W3132742487 hasAuthorship W3132742487A5014334325 @default.
• W3132742487 hasAuthorship W3132742487A5015237857 @default.
• W3132742487 hasAuthorship W3132742487A5021328683 @default.
• W3132742487 hasAuthorship W3132742487A5033080900 @default.
• W3132742487 hasAuthorship W3132742487A5039831508 @default.
• W3132742487 hasAuthorship W3132742487A5042340205 @default.
• W3132742487 hasAuthorship W3132742487A5065037360 @default.
• W3132742487 hasAuthorship W3132742487A5067411623 @default.
• W3132742487 hasAuthorship W3132742487A5069002782 @default.
• W3132742487 hasAuthorship W3132742487A5083546610 @default.
• W3132742487 hasBestOaLocation W31327424871 @default.
• W3132742487 hasConcept C119599485 @default.
• W3132742487 hasConcept C121332964 @default.
• W3132742487 hasConcept C123299182 @default.
• W3132742487 hasConcept C127413603 @default.
• W3132742487 hasConcept C145598152 @default.
• W3132742487 hasConcept C159985019 @default.
• W3132742487 hasConcept C165801399 @default.
• W3132742487 hasConcept C171250308 @default.
• W3132742487 hasConcept C172385210 @default.
• W3132742487 hasConcept C192562407 @default.
• W3132742487 hasConcept C207821765 @default.
• W3132742487 hasConcept C26873012 @default.
• W3132742487 hasConcept C2777855556 @default.
• W3132742487 hasConcept C49040817 @default.
• W3132742487 hasConcept C57879066 @default.
• W3132742487 hasConceptScore W3132742487C119599485 @default.
• W3132742487 hasConceptScore W3132742487C121332964 @default.

• next