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• W3132960097 abstract "The fresh developments in the area of terahertz (THz) devices and systems based on gallium nitride (GaN) have lifted the requirement of the state-of-the-art noncontact characterization techniques. In this chapter, three major noncontact characterization techniques used for characterizing GaN-based THz devices have been described in details; those are (i) THz time-domain spectroscopy, (ii) laser-induced THz emission spectroscopy, and (iii) THz electromodulation spectroscopy. These noncontact characterization techniques have been established as potential alternatives of conventional contact measurement techniques due to their accuracy, reliability, and capability of providing noteworthy amount of visually interpretable information." @default.
• W3132960097 created "2021-03-01" @default.
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• W3132960097 date "2021-01-01" @default.
• W3132960097 modified "2023-09-27" @default.
• W3132960097 title "Noncontact Characterization Techniques of GaN-Based Terahertz Devices" @default.
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• W3132960097 doi "https://doi.org/10.1007/978-981-33-4489-1_3" @default.
• W3132960097 hasPublicationYear "2021" @default.
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