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• W3133658483 abstract "Field emitters are attracting much attention recently because of their potential for high-frequency and harsh-environment applications. Although silicon is the most studied semiconductor for field emitters, III-Nitrides are also very promising thanks to their tunable electron affinities. Two main challenges exist for low turn-on-voltage III-Nitrides field emitters: lack of a self-aligned gate and tip-sharpening technologies. In this work, we demonstrate self-aligned-gated GaN field emitter arrays whose tips are sharpened by a wet-based digital etching technology. This technology allows to reduce the tip size from 40 nm down to 20 nm. Gated GaN field emitters with a turn-on voltage (V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>GE,ON</sub> ) of 20 V and current density of 150 mA/cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> at V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>GE</sub> = 50 V have been demonstrated." @default.
• W3133658483 created "2021-03-15" @default.
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• W3133658483 date "2021-03-01" @default.
• W3133658483 modified "2023-10-18" @default.
• W3133658483 title "Self-Align-Gated GaN Field Emitter Arrays Sharpened by a Digital Etching Process" @default.
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• W3133658483 doi "https://doi.org/10.1109/led.2021.3052715" @default.
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